Jie and Yi

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什么世道,今天加州比波士顿冷这么多

weather.jpg

May 24, 2007 Posted by jie | Yi /Jie says | | 1 Comment

H-index ranking of living chemists

Chemistry World has an interesting chart of H-index ranking of living chemists. For those of you who don’t know, the H-index is a numeric factor representing a scientist’s achievements, and is defined as the largest number of papers he/she published that each has been cited by others at least that same number of times. Better than simple cited times, the H-index emphasizes the productivity - rather than publishing a couple high-impact papers, one has to keep publishing and getting more papers cited to earn a high H-index.

Going back to the Chemistry World article, notice the top three chemists:

1 Corey, E. J. 132
2 Whitesides, G. M. 131
3 Karplus, M. 127

They are all from Harvard!

And now ISI Web of Science has a new feature “citation report” that automatically calculates the h-index. What is yours?

May 13, 2007 Posted by jie | Science | | No Comments

试管刷花

我家窗外惊现试管刷树。

April 28, 2007 Posted by jie | Yi /Jie says, 中文博客 | | 3 Comments

Yi’s going to the Roche Symposium

What great news are we hearing from Harvard Chemistry homepage since Prof. George Whitesides won the ACS Priestley Medal?

Yi Zhang of the Kahne group has been selected by Hoffmann-La Roche to participate in their annual Excellence in Chemistry symposium, taking place this June.

Congratulations Yi!

April 16, 2007 Posted by jie | Yi /Jie says | | 3 Comments

MEMS又一大胜利:彻底改革打印机

十年一箭呀,Silverbrook Research刚刚发布了Memjet技术,这种新的打印机用的是全幅MEMS喷头,基本上打印速度一秒钟一页以上。因为用了大规模MEMS fabrication工艺,这玩意只要200刀一台。看看这个录像 (这里还有更多录像):

为什么说十年一箭呢?这个公司十年前startup,这中间申到了1400项专利,已经名列IT公司专利前十大,但是一个产品都没有。结果一出惊人呀!详细的情况这个网站有很多报道。

刚才仔细研究了一下这个技术。基本上秘诀就是在打印机里横向铺满喷头,所以不需要喷头扫来扫去了。 每个喷头只有15 微米边长,分辨率1600 dpi:

但是还有一大堆问题:

1.墨水必须非常快干,要不然前面的还没干后面一页都出来了。所以要易挥发的墨水。

2.墨水干得快喷头容易堵怎么办?解决办法是用湿空气对着吹保持湿度,如果堵了就用高频墨水流涮一下。

3.这么快的速度打一页照片的话数据传输率要不得了。据说差一点的usb2.0都不够。所以数据是压缩的然后打印机里面有一块system-on-a-chip集成cpu硬件解压并且直接控制到各个喷头。这个芯片还负责纠错功能,据说5%的头坏掉了都没关系。

总之那1400各专利都不是吃闲饭的。

看来今年等着上市的技术:No.1: Samsung 64GB Solid State Disk; No.2: MEMjet 打印机

March 28, 2007 Posted by jie | Nerdy Tech, Science | | 2 Comments

Lipid IV paper just published!

New paper published: Synthesis of Heptaprenyl-Lipid IV to Analyze Peptidoglycan Glycosyltransferases
Yi Zhang, Eric J. Fechter, Tsung-Shing Andrew Wang, Dianah Barrett, Suzanne Walker, and Daniel E. Kahne
J. Am. Chem. Soc.; 2007; ASAP Web Release Date: 27-Feb-
2007; (Communication)ja069060gn00001.gif

February 27, 2007 Posted by jie | Science, Yi /Jie says | | 2 Comments

南京话又来了-《挤公交》

《喝混沌》之后我们终于等来了D-evil的南京话rap新作《挤公交》。从“还要辣油阿?”到“刷卡太快请重刷” - 只有真正的南京人才有这样的共鸣。也巧了最近在Caltech和LA遇到清一色的老乡,这首歌就献给大家乐。点击这里下载mp3

歌词在这里:
Read more »

February 5, 2007 Posted by jie | Yi /Jie says, 中文博客 | | 1 Comment

Best Music Video in the category of Organic Chemistry

The Award goes to … “Resistant to Base” by a group of ingenious yet anonymous chemistry graduate students. Thanks for Yi to point it out.

It gets better with the lyrics:

Your lights are on, but you’re not home
You’re in the lab, working alone.
Your synthesis is nearly done
Just add a chain to that carbon.

You can’t wait to alkylate
But first you must deprotonate
You add a mole of LDA
To overcome that pKa

Whoa, you like to think it will react with the stuff, oh yeah
It’s closer to the truth to say you can’t add enough
You know you’re gonna have to face it, it’s resistant to base.

You check pH, it’s past fourteen
Your stirring bar is dissolving
The TLC shows no products
Another mole and then reflux!

With LDA, it won’t react
Butyllithium just might abstract
That hydrogen that won’t obey
Le Chatelier’s communique

Whoa, you like to think it will react with the stuff, oh yeah
It’s closer to the truth to say you can’t add enough
You know you’re gonna have to face it, it’s resistant to base.

Might as well face it, it’s resistant to base. x5

Your sodium t-butoxide
And ammonium hydroxide
Your KOH and hydrazine
Push the pH beyond eighteen

January 30, 2007 Posted by jie | Science | | 1 Comment

High-k dielectric and metal gate are finally here

The biggest news of today: Intel annouced that it plans to sell 45 nm process chips in 2nd half of this year, which will be the first commercial product to employ a high-k dielectric and metal gates for the CMOS.

This is actually a surprise move at least to me, since the 2005 Technology Roadmap projects that high-k will be deployed by 2008, while the 2006 update slashed that and postponed it to 2010. Granted, high-k has been studied for more than a decade, and Intel actually leads the herd when they first invented a P-type metal and N-type metal gate, which are a stack of multi-layer metallic compounds (think TiN, but nobody knows what’s in there) engineered to match the work function. That’s at the end of 2003. About the same time Robert Chau published on EDL world-record MOSFET performance using HfO2 gate stack. So now with the 45-nm process with high-k (my guess is a certain kind of hafnium silicate), Intel is a year ahead of IBM and AMD in terms of technology.

I’ve always believed that semiconductor industry is mostly about money, then technology. The whole Moore’s law thing is just an example of the marketing feedback to R&D. For Intel it’s all about beating IBM+AMD. Right now it is strangling them with the Core architecture and high-k, which I think may be an overkill. Another example is the SOI. Intel has been refusing to adopt it because obviously its bulk Si technology can sustain through 45 nm node. This has limited the supply market of SOI wafers, causing increased cost to AMD and IBM, which have been using SOI from 90nm and 65 nm, respectively. I have to say, great strategy, Intel!

January 27, 2007 Posted by jie | Nerdy Tech, Science | | No Comments